Method of forming contacts for devices with multiple stress liners

US9023696B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Peter Baars · Dresden, DE
• Marco Lepper · Dresden, DE
• Thilo Scheiper · Dresden, DE

Key dates

• Filing date: May 26, 2011
• Grant date: May 5, 2015
• Expiry date: Jun 26, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0186

Abstract

Disclosed herein is a method of forming a semiconductor device. In one example, the method includes performing a first process operation to form a first etch stop layer above a first region of a semiconducting substrate where a first type of transistor device will be formed, and forming a first stress inducing layer at least above the first etch stop layer in the first region, wherein the first stress inducing layer is adapted to induce a stress in a channel region of the first type of transistor. The method further includes, after forming the first etch stop layer, performing a second process operation form a second etch stop layer above a second region of the substrate where a second type of transistor device will be formed, and forming a second stress inducing layer at least above the second etch stop layer in the second region, wherein the second stress inducing layer is adapted to induce a stress in a channel region of the second type of transistor. In one particular example, the first and second etch stop layers may have the same approximate thickness.