In-situ deposition of film stacks
US9028924B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2012 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | Nov 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of forming a film stack may include the plasma accelerated deposition of a silicon nitride film formed from the reaction of nitrogen containing precursor with silicon containing precursor, the plasma accelerated substantial elimination of silicon containing precursor from the processing chamber, the plasma accelerated deposition of a silicon oxide film atop the silicon nitride film formed from the reaction of silicon containing precursor with oxidant, and the plasma accelerated substantial elimination of oxidant from the processing chamber. Process station apparatuses for forming a film stack of silicon nitride and silicon oxide films may include a processing chamber, one or more gas delivery lines, one or more RF generators, and a system controller having machine-readable media with instructions for operating the one or more gas delivery lines, and the one or more RF generators.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.