Composite high-k gate dielectric stack for reducing gate leakage
US9029959B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2012 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | Dec 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A composite high dielectric constant (high-k) gate dielectric includes a stack of a doped high-k gate dielectric and an undoped high-k gate dielectric. The doped high-k gate dielectric can be formed by providing a stack of a first high-k dielectric material layer and a dopant metal layer and annealing the stack to induce the diffusion of the dopant metal into the first high-k dielectric material layer. The undoped high-k gate dielectric is formed by subsequently depositing a second high-k dielectric material layer. The composite high-k gate dielectric can provide an increased gate-leakage oxide thickness without increasing inversion oxide thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.