Facilitating mask pattern formation
US9034767B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 11, 2013 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | Nov 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Mask pattern formation is facilitated by: providing a mask structure including at least one sacrificial spacing structure disposed above a substrate structure; disposing a spacer layer conformally over the mask structure; selectively removing the spacer layer, leaving, at least in part, sidewall spacers along sidewalls of the at least one sacrificial spacing structure, and providing at least one additional sacrificial spacer over the substrate structure, one additional sacrificial spacer of the at least one additional sacrificial spacer being disposed in set spaced relation to the at least one sacrificial spacing structure; and removing the at least one sacrificial spacing structure, leaving the sidewall spacers and the at least one additional sacrificial spacer over the substrate structure as part of a mask pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.