Method for manufacturing a semiconductor substrate
US9035474B2 · kind B2 · utility
3Cited by
30References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2010 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | Jan 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for manufacturing a semiconductor substrate, in particular, a semiconductor-on-insulator substrate by providing a donor substrate and a handle substrate, forming a pattern of one or more doped regions typically inside the handle substrate, and then attaching such as by molecular bonding the donor substrate and the handle substrate to obtain a donor-handle compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.