Erased state reading
US9047974B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2013 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | May 29, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0483
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of determining whether a page of NAND flash memory cells is in an erased condition includes applying a first set of read conditions to identify a first number of cells having threshold voltages above a discrimination voltage under the first set of read conditions, if the first number of cells is less than a first predetermined number, applying a second set of read conditions that is different from the first set of read conditions to identify a second number of cells having threshold voltages above the discrimination voltage under the second set of read conditions, and if the second number of cells exceeds a second predetermined number, marking the page of flash memory cells as partially programmed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.