NH3 containing plasma nitridation of a layer on a substrate
US9054048B2 · kind B2 · utility
7Cited by
18References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2012 |
| Grant date | Jun 9, 2015 |
| Priority date | — |
| Expiry date | Jul 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0234
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes exposing a first layer of a substrate to a plasma formed from a process gas comprising predominantly a mixture of ammonia (NH3) and a noble gas, wherein ammonia is about 0.5 to about 15 percent of the process gas; and maintaining the process chamber at a pressure of about 10 mTorr to about 80 mTorr while exposing the first layer to the plasma to transform at least an upper portion of the first layer into a nitrogen-containing layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.