Write operations with full sequence programming for defect management in nonvolatile memory

US9063671B2 · kind B2 · utility

Assignee

• Sandisk Technologies, Inc. · US

Inventors

• Chris Avila · Sunnyvale, US
• Gautam Dusija · San Jose, US
• Jian Chen · San Jose, US
• Alexander Kwok-Tung Mak · Los Altos Hills, US
• Seungpil Lee · San Ramon, US
• Mrinal Kochar · San Jose, US
• Pao-Ling Koh · Fremont, US

Key dates

• Filing date: Jul 2, 2013
• Grant date: Jun 23, 2015
• Expiry date: Dec 1, 2033

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C2211/5641
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

Data that is stored in a higher error rate format in a nonvolatile memory is backed up in a lower error rate format. Data to be stored may be transferred once to on-chip data latches where it is maintained while it is programmed in both the high error rate format and the low error rate format without being resent to the nonvolatile memory. High error rate format may be MLC format and programming in the high error rate format may program both lower page and upper page data together in a full sequence programming scheme that is suitable for handling high data volume.