LDMOS FinFET device using a long channel region and method of manufacture

US9082852B1 · kind B1 · utility

Assignees

• STMICROELECTRONICS, INC. · US
• GlobalFoundries Inc. · KY
• International Business Machines Corporation · US

Inventors

• Qing Liu · Guilderland, US
• Ruilong Xie · Niskayuna, US
• Xiuyu Cai · San Diego, US
• Chun-Chen Yeh · Clifton Park, US

Key dates

• Filing date: Dec 4, 2014
• Grant date: Jul 14, 2015
• Expiry date: Dec 4, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017

Abstract

A FinFET includes a semiconductor fin supporting a first transistor and a second transistor. A first transistor gate electrode extends over a first channel region of the fin and a second transistor gate electrode extends over a second channel region of the fin. Epitaxial growth material on a top of the fin forms a raised source region on a first side of the first transistor gate electrode, an intermediate region between a second side of the first transistor gate electrode and a first side of the second transistor gate electrode, and a raised drain region on a second side of the second transistor gate electrode. The first and second transistor gate electrodes are short circuit connected to each other, with the first transistor configured to have a first threshold voltage and the second transistor configured to have a second threshold voltage different from the first threshold voltage.