Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenches
US9087927B2 · kind B2 · utility
0Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2014 |
| Grant date | Jul 21, 2015 |
| Priority date | — |
| Expiry date | Oct 23, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench structure that in one embodiment includes a trench present in a substrate, and a dielectric layer that is continuously present on the sidewalls and base of the trench. The dielectric layer has a dielectric constant that is greater than 30. The dielectric layer is composed of tetragonal phase hafnium oxide with silicon present in the grain boundaries of the tetragonal phase hafnium oxide in an amount ranging from 3 wt. % to 20 wt. %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.