Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof

US9090989B2 · kind B2 · utility

Assignee

• II-VI Incorporated · US

Inventors

• Ilya Zwieback · Township of Washington, US
• Ping Wu · Hackettstown, US
• Varatharajan Rengarajan · Flanders, US
• Avinash Gupta · Gainesville, US
• Thomas E. Anderson · Normal, US
• Gary E. Ruland · Morristown, US
• Andrew E. Souzis · Ramsey, US
• Xueping Xu · Vernon, US

Key dates

• Filing date: May 24, 2013
• Grant date: Jul 28, 2015
• Expiry date: Jan 11, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01B3/025
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

In a crystal growth apparatus and method, polycrystalline source material and a seed crystal are introduced into a growth ambient comprised of a growth crucible disposed inside of a furnace chamber. In the presence of a first sublimation growth pressure, a single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a first gas that includes a reactive component that reacts with and removes donor and/or acceptor background impurities from the growth ambient during said sublimation growth. Then, in the presence of a second sublimation growth pressure, the single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a second gas that includes dopant vapors, but which does not include the reactive component.