Method of chemical mechanical polishing a substrate

US9102034B2 · kind B2 · utility

Assignees

• Rohm and Haas Electronic Materials CMP Holdings, Inc. · US
• DOW GLOBAL TECHNOLOGIES LLC · US

Inventors

• Michelle Jensen · Newark, US
• Bainian Qian · Newark, US
• Fengji Yeh · Wilmington, US
• Marty W. DeGroot · Middletown, US
• Mohammad T. Islam · Middletown, US
• Matthew Van Hanehem · Middletown, US
• Darrell String · Havre de Grace, US
• James Murnane · Norristown, US
• Jeffrey James Hendron · Elkton, US
• John G. Nowland · Elkton, US

Key dates

• Filing date: Aug 30, 2013
• Grant date: Aug 11, 2015
• Expiry date: Feb 14, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3212
• WIPO field: Machine tools
• WIPO sector: Mechanical engineering

Abstract

A method of chemical mechanical polishing a substrate is provided, including: providing a substrate; providing a chemical mechanical polishing pad, comprising: a polishing layer having a composition and a polishing surface, wherein the composition of polishing layer is selected to exhibit an initial hydrolytic stability; coupled with a sustained hydrolytic instability; a rigid layer having a top surface and a bottom surface; a hot melt adhesive interposed between the base surface of the polishing layer and the top surface of the rigid layer; wherein the hot melt adhesive bonds the polishing layer to the rigid layer; a pressure sensitive platen adhesive layer having a stack side and a platen side; wherein the stack side of the pressure sensitive platen adhesive layer is adjacent to the bottom surface of the rigid layer; and, creating dynamic contact between the polishing surface and substrate to polish a surface of the substrate.