Copper residue chamber clean
US9114438B2 · kind B2 · utility
183Cited by
437References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2013 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | Nov 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32009
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods of removing copper residue from interior surfaces of an etch process chamber are described. A plasma treatment using halogen-containing precursors transforms the copper residue into halogen-copper complexes. Plasma-excited inert gases are used to desorb the halogen-copper complexes. In this way, the copper residue is removed from the interior surfaces of the etch process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.