Dense oxide coated component of a plasma processing chamber and method of manufacture thereof

US9123651B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Hong Shih · Santa Clara, US
• Lin Xu · Zhenjiang, CN
• John Michael Kerns · Fremont, US
• William Charles · Lawrence, US
• John Daugherty · Fremont, US
• Sivakami Ramanathan · Fremont, US
• Russell Ormond · San Jose, US
• Robert Griffith O'Neill · Hayward, US
• Tom Stevenson · Gilroy, US

Key dates

• Filing date: Mar 27, 2013
• Grant date: Sep 1, 2015
• Expiry date: May 10, 2033

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/1259
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.