Pillar on pad interconnect structures, semiconductor devices including same and related methods
US9129869B2 · kind B2 · utility
1Cited by
3References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2014 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | Feb 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/381
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating interconnect structures for semiconductor dice comprise forming conductive elements in contact with bond pads on an active surface over a full pillar diameter of the conductive elements, followed by application of a photodefinable material comprising a photoresist to the active surface and over the conductive elements. The polyimide material is selectively exposed and developed to remove photodefinable material covering at least tops of the conductive elements. Semiconductor dice and semiconductor die assemblies are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.