REN semiconductor layer epitaxially grown on REAIN/REO buffer on Si substrate
US9139934B2 · kind B2 · utility
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30Claims
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Key dates
| Filing date | Jan 23, 2014 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Mar 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Rare earth semiconductor and ferromagnetic material epitaxially grown on a silicon substrate includes a buffer of single crystal epitaxial rare earth/aluminum nitride positioned on a single crystal silicon substrate and a single crystal epitaxial rare earth oxide positioned on the single crystal epitaxial aluminum nitride. A layer of single crystal epitaxial semiconductor and ferromagnetic rare earth nitride is positioned on the buffer. A layer of III-V semiconductive material may be optionally positioned on the rare earth nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.