Etch process with pre-etch transient conditioning
US9142417B2 · kind B2 · utility
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2References
18Claims
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Key dates
| Filing date | Dec 14, 2012 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Mar 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/467
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching features with different aspect ratios in an etch layer is provided. A plurality of cycles is provided wherein each cycle comprises a pre-etch transient conditioning of the etch layer, which provides a transient condition of the etch layer, wherein the transient condition has a duration and etching the etch layer for a duration, wherein the duration of the etching with respect to the duration of the transient condition is controlled to control etch aspect ratio dependence.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.