Semiconductor structure with increased space and volume between shaped epitaxial structures
US9165767B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2013 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Nov 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0158
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a bulk silicon substrate and one or more silicon fins coupled to the bulk silicon substrate. Stress-inducing material(s), such as silicon, are epitaxially grown on the fins into naturally diamond-shaped structures using a controlled selective epitaxial growth. The diamond shaped structures are subjected to annealing at about 750° C. to about 850° C. to increase an area of (100) surface orientation by reshaping the shaped structures from the annealing. Additional epitaxy is grown on the increased (100) area. Multiple cycles of increasing the area of (100) surface orientation (e.g., by the annealing) and growing additional epitaxy on the increased area are performed to decrease the width of the shaped structures, increasing the space between them to prevent them from merging, while also increasing their volume.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.