Method to enhance strain in fully isolated finFET structures

US9166049B2 · kind B2 · utility

Assignees

• STMICROELECTRONICS, INC. · US
• International Business Machines Corporation · US

Inventors

• Nicolas Loubet · Guilderland, US
• Ali Khakifirooz · Los Altos, US
• Pierre Morin · Albany, US
• Sanjay C. Mehta · Niskayuna, US

Key dates

• Filing date: Mar 7, 2014
• Grant date: Oct 20, 2015
• Expiry date: Mar 7, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62

Abstract

Methods and structures for increasing strain in fully insulated finFETs are described. The finFET structures may be formed on an insulating layer and include source, channel, and drain regions that are insulated all around. During fabrication, the source and drain regions may be formed as suspended structures. A strain-inducing material may be formed around the source and drain regions on four contiguous sides so as to impart strain to the channel region of the finFET.