Sub-oxide interface layer for two-terminal memory

US9166163B2 · kind B2 · utility

Assignee

• CrossBar, Inc. · US

Inventors

• Harry Yue Gee · Santa Clara, US
• Mark Clark · Santa Clara, US
• Steven Patrick Maxwell · Sunnyvale, US
• Sung Hyun Jo · Sunnyvale, US
• Natividad Vasquez · San Francisco, US

Key dates

• Filing date: Sep 13, 2013
• Grant date: Oct 20, 2015
• Expiry date: Dec 6, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/883

Abstract

Provision of fabrication, construction, and/or assembly of a two-terminal memory device is described herein. The two-terminal memory device can include an active region with a silicon bearing layer, an interface layer, and an active metal layer. The interface layer can created comprising a non-stoichimetric sub-oxide that can be a combination of multiple silicon and/or silicon oxide layers with an aggregate chemical formula of SiOX, where X can be a non-integer greater than zero and less than 2. The sub-oxide can be created in a variety of ways, including various techniques related to growing the sub-oxide, depositing the sub-oxide, or transforming an extant film into the sub-oxide.