Spacer replacement for replacement metal gate semiconductor devices

US9171927B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Sanjay C. Mehta · Niskayuna, US
• Shom Ponoth · Irvine, US
• Muthumanickam Sankarapandian · Niskayuna, US
• Theodorus E. Standaert · Clifton Park, US
• Tenko Yamashita · Schenectady, US

Key dates

• Filing date: Mar 26, 2013
• Grant date: Oct 27, 2015
• Expiry date: Mar 26, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/667

Abstract

A method comprising steps of removing a first dielectric material, including a hard mask layer and one or more spacer material layers, from a semiconductor device having a sacrificial gate whose sidewalls being covered by said spacer material layers, and a raised source and a raised drain region with both, together with said sacrificial gate, being covered by said hard mask layer, wherein the removing is selective to the sacrificial gate, raised source region and raised drain region and creates a void between each of the raised source region, raised drain region and sacrificial gate. The method includes depositing a conformal layer of a second dielectric material to the semiconductor device, wherein the second material conforms in a uniform layer to the raised source region, raised drain region and sacrificial gate, and fills the void between each of the raised source region, raised drain region and sacrificial gate.