Annealing oxide gate dielectric layers for replacement metal gate field effect transistors

US9177868B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Unoh Kwon · Fishkill, US
• Wing L. Lai · Williston, US
• Vijay Narayanan · New York, US
• Ravikumar Ramachandran · Beacon, US
• Shahab Siddiqui · Clifton Park, US

Key dates

• Filing date: Mar 28, 2014
• Grant date: Nov 3, 2015
• Expiry date: Apr 26, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/024

Abstract

A method of manufacturing a semiconductor structure by forming an oxide layer above a substrate; optionally annealing the oxide layer to densify the oxide layer; forming a first sacrificial gate above the substrate; removing the first dummy gate; optionally annealing the first gate oxide layer; and forming a first replacement metal gate above the gate oxide layer. In some embodiments selective nitridation may be performed during the annealing step.