Wing L. Lai
10Patents
4h-index
25Co-inventors
56Inventor score
Filing activity: Nov 4, 2003 → Oct 13, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7067886B2 | Method of assessing potential for charging damage in SOI designs and structures for eliminating potential for damage | Electricity | 92 | Expired |
| US9231072B2 | Multi-composition gate dielectric field effect transistors | Electricity | 10 | Active |
| US7132318B2 | Method of assessing potential for charging damage in SOI designs and structures for eliminating potential for damage | Electricity | 8 | Expired |
| US9190406B2 | Fin field effect transistors having heteroepitaxial channels | Electricity | 6 | Active |
| US9224826B2 | Multiple thickness gate dielectrics for replacement gate field effect transistors | Electricity | 2 | Active |
| US9099393B2 | Enabling enhanced reliability and mobility for replacement gate planar and FinFET structures | Electricity | 2 | Active |
| US7477961B2 | Equivalent gate count yield estimation for integrated circuit devices | Physics | 0 | Active |
| US9177868B2 | Annealing oxide gate dielectric layers for replacement metal gate field effect transistors | Electricity | 0 | Active |
| US9397175B2 | Multi-composition gate dielectric field effect transistors | Electricity | 0 | Active |
| US9368593B2 | Multiple thickness gate dielectrics for replacement gate field effect transistors | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.