Reverse conducting IGBT

US9214521B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Dorothea Werber · Munich, DE
• Frank Pfirsch · Birkenfeld, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Carsten Schaeffer · Annenheim, AT
• Volodymyr Komarnitskyy · Villach, AT
• Anton Mauder · Kolbermoor, DE

Key dates

• Filing date: Jun 21, 2012
• Grant date: Dec 15, 2015
• Expiry date: Nov 20, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a first emitter region of a first conductivity type, a second emitter region of a second conductivity type complementary to the first type, a drift region of the second conductivity type, and a first electrode. The first and second emitter regions are arranged between the drift region and first electrode and each connected to the first electrode. A device cell of a cell region includes a body region of the first conductivity type adjoining the drift region, a source region of the second conductivity type adjoining the body region, and a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric. A second electrode is electrically connected to the source and body regions. A parasitic region of the first conductivity type is disposed outside the cell region and includes at least one section with charge carrier lifetime reduction means.