III-N material grown on REN epitaxial buffer on Si substrate
US9236249B2 · kind B2 · utility
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23Claims
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Key dates
| Filing date | Jul 11, 2013 |
| Grant date | Jan 12, 2016 |
| Priority date | — |
| Expiry date | Jul 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of growing III-N material on a silicon substrate includes the steps of epitaxially growing a single crystal rare earth oxide on a silicon substrate, epitaxially growing a single crystal rare earth nitride on the single crystal rare earth oxide, and epitaxially growing a layer of single crystal III-N material on the single crystal rare earth nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.