Method for manufacturing a fin MOS transistor

US9236478B2 · kind B2 · utility

Assignees

• STMicroelectronics SA
• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Yves Morand · Grenoble, FR
• Romain Wacquez · Grenoble, FR
• Laurent Grenouillet · Voiron, FR
• Yannick Le Tiec · Crolles, FR
• Maud Vinet · Voiron, FR

Key dates

• Filing date: Feb 28, 2014
• Grant date: Jan 12, 2016
• Expiry date: Feb 28, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

A method for manufacturing a fin MOS transistor from an SOI-type structure including a semiconductor layer on a silicon oxide layer coating a semiconductor support, this method including the steps of: a) forming, from the surface of the semiconductor layer, at least one trench delimiting at least one fin in the semiconductor layer and extending all the way to the surface of the semiconductor support; b) etching the sides of a portion of the silicon oxide layer located under the fin to form at least one recess under the fin; and c) filling the recess with a material selectively etchable over silicon oxide.