Recrystallization of source and drain blocks from above
US9246006B2 · kind B2 · utility
4Cited by
2References
7Claims
0Family size
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Key dates
| Filing date | Aug 7, 2014 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Aug 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/307
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a transistor is provided, including amorphization and doping, by one or more localized implantations, of given regions of source and drain blocks based on crystalline semi-conductor material disposed on an insulating layer of a semi-conductor on insulator substrate, the implantations being carried out so as to conserve at a surface of said blocks zones of crystalline semi-conductor material on regions of amorphous semi-conductor material; and recrystallization of at least one portion of said given regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.