Tunneling barrier creation in MSM stack as a selector device for non-volatile memory application
US9246092B1 · kind B1 · utility
4Cited by
6References
14Claims
0Family size
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Key dates
| Filing date | Nov 26, 2014 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Nov 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/826
Abstract
Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can include insulator layers between the semiconductor layer and the metal layers to lower the leakage current of the device. The metal layers of the selector element can include conductive materials such as tungsten, titanium nitride, or combinations thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.