CVD flowable gap fill

US9257302B1 · kind B1 · utility

Assignee

• Novellus Systems, Inc. · US

Inventors

• Feng Wang · Fremont, US
• Victor Lu · Foster City, US
• Brian Lu · Fremont, US
• Wai-Fan Yau · Mountain View, US
• Nerissa Draeger · Milpitas, US
• Vishal Gauri · San Jose, US
• Raashina Humayun · Los Altos, US
• Michal Danek · Cupertino, US
• Bart van Schravendijk · Sunnyvale, US
• Lakshminarayana Nittala · Sunnyvale, US

Key dates

• Filing date: May 1, 2012
• Grant date: Feb 9, 2016
• Expiry date: Jun 3, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02164
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Provided are methods of filling gaps on a substrate by creating flowable silicon oxide-containing films. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrate. In certain embodiments, the methods involve using a catalyst in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant.