Method to etch non-volatile metal materials
US9257638B2 · kind B2 · utility
51Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2014 |
| Grant date | Feb 9, 2016 |
| Priority date | — |
| Expiry date | Jul 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/063
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for etching a stack with an Ru containing layer disposed below a hardmask and above a magnetic tunnel junction (MTJ) stack with pinned layer is provided. The hardmask is etched with a dry etch. The Ru containing layer is etched, where the etching uses hypochlorite and/or O3 based chemistries. The MTJ stack is etched. The MTJ stack is capped with dielectric materials. The pinned layer is etched following the MTJ capping.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.