Semiconductor device and method of bonding semiconductor die to substrate in reconstituted wafer form
US9287204B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2013 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Oct 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18161
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a plurality of semiconductor die disposed over a carrier. An electrical interconnect, such as a stud bump, is formed over the semiconductor die. The stud bumps are trimmed to a uniform height. A substrate includes a bump over the substrate. The electrical interconnect of the semiconductor die is bonded to the bumps of the substrate while the semiconductor die is disposed over the carrier. An underfill material is deposited between the semiconductor die and substrate. Alternatively, an encapsulant is deposited over the semiconductor die and substrate using a chase mold. The bonding of stud bumps of the semiconductor die to bumps of the substrate is performed using gang reflow or thermocompression while the semiconductor die are in reconstituted wafer form and attached to the carrier to provide a high throughput of the flipchip type interconnect to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.