Patent · US Active

Semiconductor structure with thin film resistor and terminal bond pad

US9287345B2 · kind B2 · utility

1Cited by
78References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 29, 2013
Grant dateMar 15, 2016
Priority date
Expiry dateApr 17, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/19043
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Disclosed are methods for forming a thin film resistor and terminal bond pad simultaneously. A method includes simultaneously forming a terminal bond pad on a terminal wire and a thin film resistor on two other wires.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.