John C. Malinowski
15Patents
7h-index
40Co-inventors
66Inventor score
Filing activity: Apr 9, 1992 → Oct 8, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5204280A | Process for fabricating multiple pillars inside a dram trench for increased capacitor surface | Emerging Cross-Sectional Technologies | 64 | Expired |
| US6656815B2 | Process for implanting a deep subcollector with self-aligned photo registration marks | Electricity | 18 | Expired |
| US8565510B2 | Methods for reading a feature pattern from a packaged die | Electricity | 17 | Active |
| US8563336B2 | Method for forming thin film resistor and terminal bond pad simultaneously | Electricity | 15 | Active |
| US6259148A | Modular high frequency integrated circuit structure | Electricity | 12 | Expired |
| US7067914B2 | Dual chip stack method for electro-static discharge protection of integrated circuits | Electricity | 12 | Expired |
| US8187897B2 | Fabricating product chips and die with a feature pattern that contains information relating to the product chip | Electricity | 11 | Active |
| US7053460B2 | Multi-level RF passive device | Electricity | 7 | Expired |
| US6413868B1 | Modular high frequency integrated circuit structure | Electricity | 6 | Expired |
| US7025891B2 | Method of polishing C4 molybdenum masks to remove molybdenum peaks | Chemistry; Metallurgy | 6 | Expired |
| US8729664B2 | Discontinuous guard ring | Electricity | 5 | Active |
| US9230921B2 | Self-healing crack stop structure | Electricity | 4 | Active |
| US6656375B1 | Selective nitride: oxide anisotropic etch process | Electricity | 2 | Expired |
| US8299609B2 | Product chips and die with a feature pattern that contains information relating to the product chip | Electricity | 2 | Active |
| US9287345B2 | Semiconductor structure with thin film resistor and terminal bond pad | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.