Semiconductor contacts and methods of fabrication
US9305785B2 · kind B2 · utility
3Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2014 |
| Grant date | Apr 5, 2016 |
| Priority date | — |
| Expiry date | Nov 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention provide an improved structure and method of contact formation. A cap nitride is removed from a gate in a region that is distanced from a fin. This facilitates reduced process steps, allowing the gate and the source/drain regions to be opened in the same process step. Extreme Ultraviolet Lithography (EUVL) may be used to pattern the resist to form the contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.