Devices, systems and methods for manufacturing through-substrate vias and front-side structures
US9305865B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2013 |
| Grant date | Apr 5, 2016 |
| Priority date | — |
| Expiry date | Nov 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of manufacturing semiconductor devices and semiconductor devices with through-substrate vias (TSVs). One embodiment of a method of manufacturing a semiconductor device includes forming an opening through a dielectric structure and at least a portion of a semiconductor substrate, and forming a dielectric liner material having a first portion lining the opening and a second portion on an outer surface of the dielectric structure laterally outside of the opening. The method further includes removing the conductive material such that the second portion of the dielectric liner material is exposed, and forming a damascene conductive line in the second portion of the dielectric liner material that is electrically coupled to the TSV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.