FinFET spacer formation by oriented implantation
US9318578B2 · kind B2 · utility
7Cited by
9References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2012 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | Sep 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A FinFET having spacers with a substantially uniform profile along the length of a gate stack which covers a portion of a fin of semiconductor material formed on a substrate is provided by depositing spacer material conformally on both the fins and gate stack and performing an angled ion impurity implant approximately parallel to the gate stack to selectively cause damage to only spacer material deposited on the fin. Due to the damage caused by the angled implant, the spacer material on the fins can be etched with high selectivity to the spacer material on the gate stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.