Injection control in semiconductor power devices
US9318587B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2014 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | May 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor power devices can be formed on substrate structure having a lightly doped semiconductor substrate of a first conductivity type or a second conductivity type opposite to the first conductivity type. A semiconductive first buffer layer of the first conductivity type formed above the substrate. A doping concentration of the first buffer layer is greater than a doping concentration of the substrate. A second buffer layer of the second conductivity type formed above the first buffer layer. An epitaxial layer of the second conductivity type formed above the second buffer layer. A doping concentration of the epitaxial layer is greater than a doping concentration of the second buffer layer. This abstract is provided to allow a searcher or reader to quickly ascertain the subject matter of the disclosure with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.