Methods of forming fins for finFET semiconductor devices and the selective removal of such fins
US9337050B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 31, 2015 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Mar 31, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative method disclosed herein includes, among other things, forming an inverted, generally T-shaped mandrel feature having a base mandrel structure and a substantially vertically oriented fin mandrel structure, the base mandrel structure having a lateral width that is greater than a lateral width of the fin mandrel structure, forming a sidewall spacer adjacent the sidewalls of the base mandrel structure and the fin mandrel structure, performing at least one etching process to remove portions of the inverted, generally T-shaped mandrel feature not covered by a sidewall spacer, wherein, after the etching process is completed, the sidewall spacers and remaining portions of the mandrel feature, collectively, define a fin pattern, and performing at least one additional process operation to form a plurality of fins in the substrate that correspond to the fin pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.