Semiconductor devices

US9337185B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Frank Pfirsch · Birkenfeld, DE
• Dorothea Werber · Munich, DE
• Carsten Schaeffer · Annenheim, AT

Key dates

• Filing date: Dec 5, 2014
• Grant date: May 10, 2016
• Expiry date: Dec 5, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

A semiconductor device includes a first doping region extending from a main surface of a semiconductor substrate into the semiconductor substrate. Further, the semiconductor device includes a second doping region arranged adjacent to the first doping region. The first doping region includes at least one low doping dose portion extending from the main surface of the semiconductor substrate to the second doping region. A doping dose within the low doping dose portion of the first doping region is less than 3 times a breakdown charge. Additionally, the semiconductor device includes a first electrode structure in contact with the first doping region at the main surface of the semiconductor substrate. The work function of the first electrode structure at the main surface of the semiconductor substrate is larger than 4.9 eV or lower than 4.4 eV.