Photo-induced MSM stack
US9337238B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2014 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Oct 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/10
Abstract
Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The semiconductor layer of the selector element can include a photo-luminescent or electro-luminescent material. Conductive materials of the MSM may include tungsten, titanium nitride, carbon, or combinations thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.