Damascene metal-insulator-metal (MIM) device with improved scaleability

US9343666B2 · kind B2 · utility

Assignee

• Cypress Semiconductor Corporation · US

Inventors

• Suzette K. Pangrle · Cupertino, US
• Steven C. Avanzino · Cupertino, US
• Sameer Haddad · San Jose, US
• Michael VanBuskirk · Saratoga, US
• Manuj Rathor · Milpitas, US
• James J. Xie · San Jose, US
• Kevin Song · Santa Clara, US
• Christie Marrian · San Jose, US
• Bryan K. Choo · Mountain View, US
• Fei Wang · San Jose, US
• Jeffery A. Shields · Sunnyvale, US

Key dates

• Filing date: Jun 21, 2012
• Grant date: May 17, 2016
• Expiry date: Jun 21, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A present method of fabricating a memory device includes the steps of providing a dielectric layer, providing an opening in the dielectric layer, providing a first conductive body in the opening, providing a switching body in the opening, the first conductive body and switching body filling the opening, and providing a second conductive body over the switching body. In an alternate embodiment, a second dielectric layer is provided over the first-mentioned dielectric layer, and the switching body is provided in an opening in the second dielectric layer.