Semiconductor device with charge carrier lifetime reduction means

US9362349B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Dorothea Werber · Munich, DE
• Frank Pfirsch · Birkenfeld, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Carsten Schaeffer · Annenheim, AT
• Volodymyr Komarnitskyy · Villach, AT
• Anton Mauder · Kolbermoor, DE
• Holger Schulze · Villach, AT
• Gerhard Miller · Landsberg am Lech, DE

Key dates

• Filing date: Jun 21, 2013
• Grant date: Jun 7, 2016
• Expiry date: Jan 25, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A semiconductor device includes a cell region having at least one device cell, wherein the at least one device cell includes a first device region of a first conductivity type. The semiconductor device further includes a drift region of a second conductivity type adjoining the first device region of the at least one device cell, a doped region of the first conductivity type adjoining the drift region, and charge carrier lifetime reduction means configured to reduce a charge carrier lifetime in the doped region of the first conductivity type.