Diamond like carbon (DLC) as a thermal sink in a selector stack for non-volatile memory application
US9368721B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2014 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | Dec 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). A structure including diamond-like carbon (DLC) can be used to surround the semiconductor layer of the MSM stack. The high thermal conductivity of the DLC structure may serve to remove heat from the selector device while higher currents are flowing through the selector element. This may lead to improved reliability and improved endurance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.