Semiconductor processing with DC assisted RF power for improved control

US9373517B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Jang-Gyoo Yang · San Jose, US
• Xinglong Chen · Ürümqi, CN
• Soonam Park · Sunnyvale, US
• Jonghoon Baek · San Jose, US
• Saurabh Garg · Cupertino, US
• Shankar Venkataraman · Santa Clara, US

Key dates

• Filing date: Mar 14, 2013
• Grant date: Jun 21, 2016
• Expiry date: Mar 14, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32136
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Semiconductor processing systems are described including a process chamber. The process chamber may include a lid assembly, grid electrode, conductive insert, and ground electrode. Each component may be coupled with one or more power supplies operable to produce a plasma within the process chamber. Each component may be electrically isolated through the positioning of a plurality of insulation members. The one or more power supplies may be electrically coupled with the process chamber with the use of switching mechanisms. The switches may be switchable to electrically couple the one or more power supplies to the components of the process chamber.