Interface treatment of semiconductor surfaces with high density low energy plasma

US9378941B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Aneesh Nainani · Palo Alto, US
• Bhushan Zope · Phoenix, US
• Leonid Dorf · San Jose, US
• Shahid Rauf · Pleasanton, US
• Adam Brand · Palo Alto, US
• Mathew Abraham · San Diego, US
• Subhash Deshmukh · Livermore, US

Key dates

• Filing date: Oct 28, 2013
• Grant date: Jun 28, 2016
• Expiry date: Nov 21, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02661
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An electron beam plasma source is used in a soft plasma surface treatment of semiconductor surfaces containing Ge or group III-V compound semiconductor materials.