Method of fabricating fin field effect transistor
US9379242B1 · kind B1 · utility
9Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 28, 2015 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | May 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/751
Abstract
A method of fabricating a fin field effect transistor including providing a substrate having at least one fin structure, a dummy gate, and an internal dielectric layer thereon, removing the dummy gate to form a gate trench on the fin structure, blanketly forming a stress film on the substrate to cover a surface of the gate trench, performing a thermal annealing process, removing the stress film, and forming a metal gate is in the gate trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.