Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode

US9391065B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Robert J. Gauthier, Jr. · South Burlington, US
• Tom C. Lee · South Burlington, US
• You Li · South Burlington, US
• Rahul Mishra · South Burlington, US
• Souvick Mitra · South Burlington, US
• Andreas Scholze · Colchester, US

Key dates

• Filing date: Jun 29, 2015
• Grant date: Jul 12, 2016
• Expiry date: Jun 29, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6219

Abstract

Field effect diode structures utilize a junction structure that has an L-shape in cross-section (a fin extending from a planar portion). An anode is positioned at the top surface of the fin, and a cathode is positioned at the end surface of the planar portion. The perpendicularity of the fin and the planar portion cause the anode and cathode to be perpendicular to one another. A first gate insulator contacts the fin between the top surface and the planar portion. A first gate conductor contacts the first gate insulator, and the first gate insulator is between the first gate conductor and the surface of the fin. Additionally, a second gate insulator contacts the planar portion between the end surface and the fin. A second gate conductor contacts the second gate insulator, and the second gate insulator is between the second gate conductor and the surface of the planar portion.