Lattice mismatched hetero-epitaxial film

US9391181B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Benjamin Chu-Kung · Portland, US
• Van H. Le · Portland, US
• Robert S. Chau · Beaverton, US
• Sansaptak Dasgupta · Hillsboro, US
• Gilbert Dewey · Beaverton, US
• Niti Goel · Portland, US
• Jack T. Kavalieros · Portland, US
• Matthew V. Metz · Portland, US
• Niloy Mukherjee · Beaverton, US
• Ravi Pillarisetty · Portland, US
• Willy Rachmady · Beaverton, US
• Marko Radosavljevic · Portland, US
• Han Wui Then · Portland, US
• Nancy Zelick · Portland, US

Key dates

• Filing date: Dec 21, 2012
• Grant date: Jul 12, 2016
• Expiry date: Feb 8, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/122

Abstract

An embodiment concerns forming an EPI film on a substrate where the EPI film has a different lattice constant from the substrate. The EPI film and substrate may include different materials to collectively form a hetero-epitaxial device having, for example, a Si and/or SiGe substrate and a III-V or IV film. The EPI film may be one of multiple EPI layers or films and the films may include different materials from one another and may directly contact one another. Further, the multiple EPI layers may be doped differently from another in terms of doping concentration and/or doping polarity. One embodiment includes creating a horizontally oriented hetero-epitaxial structure. Another embodiment includes a vertically oriented hetero-epitaxial structure. The hetero-epitaxial structures may include, for example, a bipolar junction transistor, heterojunction bipolar transistor, thyristor, and tunneling field effect transistor among others. Other embodiments are described herein.