FinFETs having strained channels, and methods of fabricating finFETs having strained channels

US9391200B2 · kind B2 · utility

Assignees

• STMICROELECTRONICS, INC. · US
• International Business Machines Corporation · US
• GlobalFoundries Inc. · KY

Inventors

• Qing Liu · Guilderland, US
• Xiuyu Cai · San Diego, US
• Ruilong Xie · Niskayuna, US
• Chun-Chen Yeh · Clifton Park, US

Key dates

• Filing date: Jun 18, 2014
• Grant date: Jul 12, 2016
• Expiry date: Jul 4, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/605
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Techniques and structures for controlling etch-back of a finFET fin are described. One or more layers may be deposited over the fin and etched. Etch-back of a planarization layer may be used to determine a self-limited etch height of one or more layers adjacent the fin and a self-limited etch height of the fin. Strain-inducing material may be formed at regions of the etched fin to induce strain in the channel of a finFET.