Patent · US Active

Integrated circuit and method of forming an integrated circuit

US9418937B2 · kind B2 · utility

0Cited by
5References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 9, 2011
Grant dateAug 16, 2016
Priority date
Expiry dateSep 19, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An integrated circuit includes a base element and a copper element over the base element, the copper element having a thickness of at least 5 μm and a ratio of average grain size to thickness of less than 0.7.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.